With the aim of analyzing the performance of solar cell, the most frequently used parameter is the conversion efficiency. In this paper, the conversion efficiencies for homojunction and heterojunction solar cells are determined. There are four types of solar cell semiconductor materials used in this system which are group IV elemental semiconductor material, group III- V binary compounds, group II-VI binary compounds and group III-V ternary compounds. For group IV elemental semiconductor material, silicon (Si) material is used. For group III-V binary compounds, gallium arsenide (GaAs) and indium phosphide (InP) are used. For group II-VI binary compounds, cadmium telluride (CdTe) and cadmium sulphide (CdS) are used. For group III-V ternary compounds, aluminium gallium arsenide (AlxGa1-xAs), gallium indium arsenide (Ga1- xInxAs) and gallium indium phosphide (Ga1-xInxP) are used. Firstly, the conversion efficiencies are calculated by combining these materials as homojunction. Secondly, the conversion efficiencies are evaluated by combining these materials as heterojunction. Finally, the obtained conversion efficiencies are compared and determined whether it is more suitable in p-side or n- side for each material.

Keywords : Conversion Efficiency, Homojunction, Heterojunction.