Analysis on Noise Figure of Indium Nitride-based HEMT Design

Authors : May Nwe Myint Aye, Than Htike Aung, Tin Tin Hla

Volume/Issue : Volume 4 - 2019, Issue 7 - July

Google Scholar :

Scribd :

High electron mobility transistors (HEMTs) have been shown to be high performance millimeter wave devices due to their high-power gain and low noise figures. From theoretical points of view presented the noise behavior of HEMT. This work designs an analytical noise model of an AlInN/GaN modulation doped High Electron Mobility Transistor (HEMT). The method used in the noise of high-frequency analysis is designated and the different approximations commonly used in the derivation of the noise parameter expressions are discussed. The developed noise model explains the performance of noise in both thermal noise and flicker noise. The measurement techniques providing the noise figure and the other noise parameters are then described and compared. Small signal parameters are obtained and used to calculate the device’s Noise Figure (NF) simulate by using MATLAB software.

Keywords : Flicker Noise., Thermal Noise, Indium Nitride, HEMT, Noise Figure.


Paper Submission Last Date
31 - October - 2023

Paper Review Notification
In 1-2 Days

Paper Publishing
In 2-3 Days

Video Explanation for Published paper

Never miss an update from Papermashup

Get notified about the latest tutorials and downloads.

Subscribe by Email

Get alerts directly into your inbox after each post and stay updated.

Subscribe by RSS

Add our RSS to your feedreader to get regular updates from us.