Exploring the Post-Annealing Influence on Stannous Oxide Thin Films via Chemical Bath Deposition Technique: Unveiling Structural, Optical, and Electrical Dynamics


Authors : Md. Johurul Islam; Saidul Islam; Mist Toma Khatun; Md. Forhad Hossain; Mohammad Jellur Rahman; Suravi Islam

Volume/Issue : Volume 9 - 2024, Issue 4 - April

Google Scholar : https://tinyurl.com/5n75ue82

Scribd : https://tinyurl.com/458ccrna

DOI : https://doi.org/10.38124/ijisrt/IJISRT24APR1778

Abstract : Stannous oxide (SnO2) thin films have garnered significant attention for their promising applications in various electronic and optoelectronic devices. In this study, we investigate the impact of post-annealing on the structural, optical, and electrical properties of stannous oxide thin films deposited using the chemical bath deposition (CBD) technique. The thin films were prepared on a Borosilicate glass substrate, followed by a controlled annealing process to enhance their performance. Structural analysis was conducted using techniques such as X-ray diffraction (XRD) to examine the cubic crystalline structure and the crystallite size increase induced by post-annealing. The results revealed alterations in grain size from the SEM and the purity of samples confirmed from EDX results. The optical properties of the Stannous oxide thin films were examined using UV-Vis spectroscopy. The optical absorption and bandgap characteristics were analyzed to understand how post-annealing influences the optical behavior of the thin films. Where the optical absorption was 320nm and the bandgap ranges were 3.86eV to 3.83eV. Furthermore, the electrical properties of the thin films were evaluated semiconducting nature, and conductivity increased with rising post-annealing. The findings from this study contribute to the understanding of the role of post-annealing in tailoring the properties of Stannous oxide thin films. The optimization of structural, optical, and electrical characteristics is crucial for their successful integration into electronic and optoelectronic devices.

Keywords : Sno2 Thin Films; CBD; X-Ray Diffraction (XRD), UV-Vis Spectroscopy, Post-Annealing.

References :

  1. Wohlmuth W and Adesida I; Thin Solid Films; 479; 2005; 223.
  2. Matsubara K, Fons P, Iwata K, Yamada A, Sakurai K, Tampo H and Niki S; Thin Solid Films; 431; 2003; 369.
  3. Kikuchi N, Kusano E, Kishio E and Kingara A; Vacuum; 66; 2002; 365.
  4. Man-Soo H, Lee H J, Jeong H S, Seo Y W and Kwon S J; Surf. Coat. Technol.; 29; 2003; 171.
  5. Cao H, Qiu X, Liang Y, Zhang L, ZhaoMand Zhu Q; Chem. Phys. Chem.; 7; 2006; 497.
  6. He H Jr, Wu T H, Hsin C L, Li K M, Chen L J, Chueh Y L, Chou L J and Wang Z L; Small; 2; 2006; 116.
  7. Chaudhuri U R, Ramkumar K and Satyam M; J. Phys. D: Appl. Phys; 23; 1990; 994.
  8. F. F. Liu, B. Shan, S. F. Zhang, and B. T. Tang, Langmuir 34(13); 2018; 3918–3924.
  9. L. B. Xiong, Y. X. Guo, J. Wen, H. R. Liu, G. Yang, P. L. Qin, and G. J. Fang, Adv. Funct. Mater.  28(35); 2018; 1802757.
  10. S. H.Wu, Y. T. Li, J. S. Luo, J. Lin, Y. Fan, Z. H. Gan, and X. Y. Liu, Opt. Express 22(4); 2014; 4731–4737.
  11. H. Yu, H. I. Yeom, J. W. Lee, K. Lee, D. Hwang, J. Yun, J. Ryu, J. Lee, S. Bae, S. K. Kim, and J. Jang, Adv. Mater. 30(10); 2018; 1704825.
  12. Q. Jiang, X. W. Zhang, and J. B. You, Small 14(31); 2018; 1801154.
  13. S. Parveen Banu, T. Saravana Kumaran, S. Nirmala and J. Dhanakodi; American Journal of Engineering Research (AJER); 2; 2013; 131.
  14. Noikaew, B., Chinvetkitvanich, P., Sripichal I. and Chityuttakan, C.; Journal of Metals; Materials and Minerals 18 (2); 2008; 49.
  15. Chako S, Philip N S and Vaidyan V K; Phys. Stat. Sol. (a); 204; 2007; 3305.
  16. Tewari S., and Bhattacharjee A., Pramana J. Phys.; 76; 2011; 153–163.
  17. Kim K H and Chun J S; Thin Solid Films; 141; 1986; 287.
  18. Islam M.J, Khatun N, Bhuiyan RH, Sultana S, Shaikh MA, Bitu MAB, Chowdhury F, Islam S RSC Adv.; 13; 2023; 19164.
  19. C. V. Ramana, R. J. Smith, and O. M. Hussain; phys. stat. sol. (a); 199; 2003; R4–R6.
  20. Soumia Belhamri, Nasr-Eddine Hamdadou; Journal of Physics: Conference Series 758; 2016; 12007.
  21. Tauc, J., R. Grigorovici and A. Vancu; Physica Status Solidi; 15; 1966; 627-637.
  22. Davis, E.A. and N.F. Mott; Philosophical Magazine; 22; 1970; 903.
  23. Mott, N.F. and E.A. Davis; Electronic processes in non-crystalline materials; 2nd ed.; 1979; Clarendon Press (Oxford and New York).
  24. Brian D. Viezbicke, Shane Patel, Benjamin E. Davis, and Dunbar P. Birnie; Physica Status Solidi; B, 252; 2015; 1700-1710.
  25. A.A. Yadav E.U. Masumdara, A.V. Moholkarb, M. Neumann-Spallartc, K.Y. Rajpured, C.H. Bhosaled; Journal of Alloys and Compounds; 488; 2009; 350–355.
  26. Saeideh Ebrahimiasl, Wan Md. Zin Wan Yunus, Anuar Kassim, and Zulkarnain Zainal MDPI; 11(10); 2011; 9207–9216.
  27. Wiktor Matysiak, Tomasz Tański, Weronika Smok & Oleg Polishchuk; Scientific Reports; 10; 2020; 14802.
  28. B. Sawickia, E. Tomaszewiczb, M. Piatkowskab, T. Grona, H. Dudaa and K. Górnya; ACTA PHYSICA POLONICA A; 129; 2016; 94.

Stannous oxide (SnO2) thin films have garnered significant attention for their promising applications in various electronic and optoelectronic devices. In this study, we investigate the impact of post-annealing on the structural, optical, and electrical properties of stannous oxide thin films deposited using the chemical bath deposition (CBD) technique. The thin films were prepared on a Borosilicate glass substrate, followed by a controlled annealing process to enhance their performance. Structural analysis was conducted using techniques such as X-ray diffraction (XRD) to examine the cubic crystalline structure and the crystallite size increase induced by post-annealing. The results revealed alterations in grain size from the SEM and the purity of samples confirmed from EDX results. The optical properties of the Stannous oxide thin films were examined using UV-Vis spectroscopy. The optical absorption and bandgap characteristics were analyzed to understand how post-annealing influences the optical behavior of the thin films. Where the optical absorption was 320nm and the bandgap ranges were 3.86eV to 3.83eV. Furthermore, the electrical properties of the thin films were evaluated semiconducting nature, and conductivity increased with rising post-annealing. The findings from this study contribute to the understanding of the role of post-annealing in tailoring the properties of Stannous oxide thin films. The optimization of structural, optical, and electrical characteristics is crucial for their successful integration into electronic and optoelectronic devices.

Keywords : Sno2 Thin Films; CBD; X-Ray Diffraction (XRD), UV-Vis Spectroscopy, Post-Annealing.

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