Authors :
Almo’men Bellah Alawnah; Ola Yousef Hayajneh; Rajaa Hayajneh
Volume/Issue :
Volume 8 - 2023, Issue 3 - March
Google Scholar :
https://bit.ly/3TmGbDi
Scribd :
https://bit.ly/3M0tlsP
DOI :
https://doi.org/10.5281/zenodo.7780011
Abstract :
Semiconductors has many characteristics and
properties, such as optical properties that relates to the
changes in the reflective index (n), extinction coefficient
(k), single oscillator parameters, intensity, and the band
gap energy. Factors that affect optical properties of
semiconductor materials were investigated, ten papers
that related to this topic were reviewed, in order to study
these factors. It’s found that with the increase of the
gamma dose, using surfactant, and using a passiveagent
such as CeO2 cause a reduction in the band gap energy,
while using elements from group I increase the band gap
energy, annealing temperature gas no effect on the optical
parameters, while preparation method of the
semiconductor can effect these parameters, and using
rare earth elementenhance the energy band gab.
Keywords :
Optical Properties ; Semiconductor
Semiconductors has many characteristics and
properties, such as optical properties that relates to the
changes in the reflective index (n), extinction coefficient
(k), single oscillator parameters, intensity, and the band
gap energy. Factors that affect optical properties of
semiconductor materials were investigated, ten papers
that related to this topic were reviewed, in order to study
these factors. It’s found that with the increase of the
gamma dose, using surfactant, and using a passiveagent
such as CeO2 cause a reduction in the band gap energy,
while using elements from group I increase the band gap
energy, annealing temperature gas no effect on the optical
parameters, while preparation method of the
semiconductor can effect these parameters, and using
rare earth elementenhance the energy band gab.
Keywords :
Optical Properties ; Semiconductor