Novel Fgmos Based Ultra Low-Power, High Frequency Half-Wave Rectifier


Authors : Akanksha Ninawe, Richa Srivastava

Volume/Issue : Volume 2 - 2017, Issue 7 - July

Google Scholar : https://goo.gl/KUVGZR

Scribd : https://goo.gl/5y6iGE

Thomson Reuters ResearcherID : https://goo.gl/3bkzwv

The work presents floating gate MOS (FGMOS) based low power, high frequency half wave (HW) rectifier. The basic principle of the winner-take-all (WTA) maximum circuit is exploited to obtain the desired structure. The HW rectifier takes a single sinusoidal signal as the input which is processed through WTA maximum circuit, and the output achieved is the positive swing of the input signal as expected. The simulations are performed using SPICE in 0.18µm CMOS technology with ±1.23V supply voltage to verify the operation of the proposed circuit. High frequency operation is achieved up to 300 MHz and the proposed circuit shows good temperature and noise stability and minimal variations in DC transfer characteristics for Monte Carlo simulations. The proposed rectifier is found to dissipate very low power of 0.328mW which makes it suitable for several low power applications.

Keywords : FGMOS, Half Wave Rectifier, Winner-Take-All, Low-Power, Analog Signal Processing.

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